ao4914 30v dual n-channel mosfet with schottky diode general description product summary q1(n-channel) q2(n-channel) v ds = 30v 30v i d = 8a (v gs =10v) 8a (v gs =10v) r ds(on) <20.5m r ds(on) <20.5m (v gs =10v) r ds(on) <28m r ds(on) <28m (v gs =4.5v) esd protected esd protected 100% uis tested 100% uis tested 100% r g tested 100% r g tested schottky v ds = 30v, i f = 3a, v f <0.5v@1a the ao4914 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. the two mosfets make a compact and efficient switch and synchronous rectifier combination for use in dc-dc converters. a schottky diode is co-packaged in parallel with the synchronous mosfet to boost efficiency further. soic-8 top view bottom view g2 s2 g1 s1/a d2 d2 d1/k d1/k top view g2 d2 s2 g1 d1 s 1 ka symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol v ds i fm t j , t stg c a mj avalanche energy l=0.1mh c -55 to 150 t a =70c 18 junction and storage temperature range power dissipation b 2 1.3 p d t a =25c 1.3 18 2 30 8 a 20 v 6.5 40 19 w v 20 absolute maximum ratings t a =25c unless otherwise noted max q1 drain-source voltage 30 max q2 gate-source voltage units parameter pulsed drain current c continuous drain current avalanche current c 8 i d t a =25c t a =70c 6.5 40 19 parameter units reverse voltage v max schottky 30 a t a =70c pulsed diode forward current c 3 2.2 20 continuous forward current t a =25c i f w t a =70c junction and storage temperature range -55 to 150 c 2 1.28 power dissipation b t a =25c p d soic-8 top view bottom view pin1 g2 s2 g1 s1/a d2 d2 d1/k d1/k top view g2 d2 s2 g1 d1 s 1 ka rev 11: mar. 2011 www.aosmd.com page 1 of 9
ao4914 symbol t 10s steady-state steady-state r q jl symbol t 10s steady-state steady-state r q jl this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. c/w parameter typ max units maximum junction-to-ambient a r q ja 48 62.5 c/w maximum junction-to-ambient a d 74 90 40 74 90 r q ja maximum junction-to-lead 32 40 c/w 48 thermal characteristics - mosfet parameter typ max units maximum junction-to-ambient a 62.5 c/w thermal characteristics - schottky maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the value in any given application depends on the user's spe cific board design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junctio n temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient the rmal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 11: mar. 2011 www.aosmd.com page 2 of 9
ao4914 symbol min typ max units bv dss 30 v v r =30v 0.05 v r =30v, t j =125c 10 v r =30v, t j =150c 20 i gss 10 m a v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 40 a 17 20.5 t j =125c 23.5 29 20.5 28 m w g fs 30 s v sd 0.45 0.5 v i s 3 a c iss 575 730 865 pf c oss 115 165 215 pf c rss 50 82 120 pf r g 0.5 1.1 1.7 w q g (10v) 12 15 18 nc q g (4.5v) 6 7.5 9 nc q gs 2.5 nc q gd 3 nc t d(on) 5 ns turn-on delaytime switching parameters gate resistance v gs =0v, v ds =0v, f=1mhz output capacitance v ds =0v,v gs =16v v ds =v gs i d =250 m a input capacitance total gate charge v gs =10v, v ds =15v, i d =8a gate source charge gate drain charge total gate charge q1 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions dynamic parameters v gs =10v, v ds =5v v gs =10v, i d =8a m w v gs =4.5v, i d =4a r ds(on) static drain-source on-resistance maximum body-diode + schottky continuous current drain-source breakdown voltage on state drain current i s =1a,v gs =0v v ds =5v, i d =8a ma i dss zero gate voltage drain current (set by schottky leakage) i d =250ua, v gs =0v v gs =0v, v ds =15v, f=1mhz reverse transfer capacitance gate-body leakage current forward transconductance diode forward voltage t d(on) 5 ns t r 3.5 ns t d(off) 19 ns t f 3.5 ns t rr 8 ns q rr 8 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =8a, di/dt=500a/ m s turn-off fall time turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w i f =8a, di/dt=500a/ m s body diode reverse recovery time turn-on delaytime a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the value in any given application depends on the user's specific bo ard design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junctio n temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient the rmal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 11: mar. 2011 www.aosmd.com page 3 of 9
ao4914 q1: typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =4a v gs =10v i d =8a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 4v 5v 3.5v 18 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =4a v gs =10v i d =8a 10 20 30 40 50 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =8a 25 c 125 c 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 4v 5v 3.5v fet+schottky rev 11: mar. 2011 www.aosmd.com page 4 of 9
ao4914 q1: typical electrical and thermal characteristics 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 1500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 300 600 900 1200 1500 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d single pulse rev 11: mar. 2011 www.aosmd.com page 5 of 9
ao4914 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 40 a 17 20.5 t j =125c 23.5 29 20.5 28 m w g fs 30 s v sd 0.75 1 v i s 2.5 a c iss 600 740 888 pf c oss 77 110 145 pf c rss 50 82 115 pf r g 0.5 1.1 1.7 w q g (10v) 12 15 18 nc q g (4.5v) 6 7.5 9 nc q gs 2.5 nc q gd 3 nc t d(on) 5 ns t r 3.5 ns on state drain current output capacitance q2 electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions r ds(on) i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =16v zero gate voltage drain current m w v gs =4.5v, i d =4a drain-source breakdown voltage i d =250 m a, v gs =0v static drain-source on-resistance i s =1a,v gs =0v maximum body-diode continuous current input capacitance diode forward voltage dynamic parameters v gs =10v, v ds =5v v gs =10v, i d =8a gate-body leakage current switching parameters gate drain charge total gate charge reverse transfer capacitance v gs =0v, v ds =0v, f=1mhz gate resistance total gate charge v gs =10v, v ds =15v, i d =8a gate source charge v ds =5v, i d =8a v gs =0v, v ds =15v, f=1mhz forward transconductance turn-on delaytime turn-on rise time v gs =10v, v ds =15v, r l =1.8 w , t r 3.5 ns t d(off) 19 ns t f 3.5 ns t rr 6 8 10 ns q rr 14 18 22 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. turn-on rise time body diode reverse recovery charge i f =8a, di/dt=500a/ m s turn-off delaytime i f =8a, di/dt=500a/ m s v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w body diode reverse recovery time turn-off fall time a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environm ent with t a =25 c. the value in any given application depends on the user's specific bo ard design. b. the power dissipation p d is based on t j(max) =150 c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junctio n temperature t j(max) =150 c. ratings are based on low frequency and duty cycles to keep initialt j =25 c. d. the r q ja is the sum of the thermal impedence from junction to le ad r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtaine d using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient the rmal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150 c. the soa curve provides a single pulse rating. rev 11: mar. 2011 www.aosmd.com page 6 of 9
ao4914 q2: typical electrical and thermal characteristics 17 52 10 0 18 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =4a v gs =10v i d =8a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 3.5v 4v 5v 18 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 10 15 20 25 30 0 5 10 15 20 r ds(on) (m w ww w ) i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -i s (a) -v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 normalized on-resistance temperature (c) figure 4: on-resistance vs. junction temperature (note e) v gs =4.5v i d =4a v gs =10v i d =8a 10 15 20 25 30 35 40 2 4 6 8 10 r ds(on) (m w ww w ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) 25 c 125 c v ds =5v v gs =4.5v v gs =10v i d =8a 25 c 125 c 0 5 10 15 20 25 30 0 1 2 3 4 5 i d (a) v ds (volts) fig 1: on-region characteristics (note e) v gs =2.5v 3v 10v 3.5v 4v 5v rev 11: mar. 2011 www.aosmd.com page 7 of 9
ao4914 q2: typical electrical and thermal characteristics 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction - t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe 10 m s 10s 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s 10ms 0 2 4 6 8 10 0 3 6 9 12 15 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =15v i d =8a 1 10 100 1000 0.00001 0.001 0.1 10 1000 power (w) pulse width (s) figure 10: single pulse power rating junction- to-ambient (note f) t a =25 c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -i d (amps) -v ds (volts) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) t j(max) =150 c t a =25 c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 z q qq q ja normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal impe dance (note f) in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90 c/w t on t p d rev 11: mar. 2011 www.aosmd.com page 8 of 9
ao4914 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveforms t t r d(on) t on t d(off) t f t off id l vds bv unclamped inductive switching (uis) test circuit & w aveforms vds dss 2 e = 1/2 li ar ar - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & w aveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & w aveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & w aveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 11: mar. 2011 www.aosmd.com page 9 of 9
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